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Modélisation de transistors en couches minces (TFT) fabriqués en technologies silicium microcristallin très basse température

Abstract : This thesis focuses on the modeling of TFTs based on microcrystalline silicon fabricated at low temperature. The challenge is to produce a valid model of TFT which enable us to provide an explanation of the phenomena observed experimentally and that could be the basis for a compact model. Firstly, an experimental study, in which it is shown the beneficial effect for the use of thin active layers for TFTs, has been performed. Indeed, the TFTs performances are better, when their active layers are more thin. The columnar growth of microcrystalline silicon structure and the bad interfaces state for thick active layer have an important part in the deterioration of the quality of TFTs. Thereafter , a simulation (on SILVACO ) of the behavior of TFTs with active layers of different thicknesses were made to try to provide electrostatic explanations. The same effects are caused mainly by an increase of the lateral electric field when the thickness of the active layer decreases for a defective material, promoting thereby the rapid formation of the channel. The bad quality of the front and rear interfaces has also a strong influence on the deterioration of electrical characteristics of TFTs. This influence is reduced by using a very thin active layer.
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Mamadou Lamine Samb. Modélisation de transistors en couches minces (TFT) fabriqués en technologies silicium microcristallin très basse température. Micro et nanotechnologies/Microélectronique. Université de Rennes 1, 2014. Français. ⟨tel-02441294⟩

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