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Fabrication and characterization of silicon nanowires for devices applications compatible with low temperature (≤300 ˚C) flexible substrates

Abstract : The fabrication and characterization of silicon nanowires (SiNWs) at low temperature (≤300° C) has been focused for two mainstream approaches: spacer method and Solid Liquid Solid method. The feasibility of such silicon nanowires has been explored using two deposition technologies: conventional plasma enhanced deposition (PECVD) and inductively coupled plasma deposition (ICP CVD). The studies demonstrated the feasibility of silicon nanowires using the ICP CVD process. In addition, the electrical insulation properties of SiO2 layers and the fabrication of thin-film field effect transistors were demonstrated using ICP plasma deposition technology. Furthermore, indium catalyzed SLS SiNWs were fabricated for the first time at 250 °C. Synthesis of 3D SiNWs by SLS process from silicon substrates (monocrystalline or amorphous silicon thin film) has been demonstrated. The growth of nanowires is obtained under hydrogen plasma. Studies were conducted based on the thickness of indium deposited, duration and temperature of the hydrogen plasma. All these results were concluded originally and they enable the possibility of fabrication of SiNWs based electronic devices onto low temperature flexible substrates.
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Kai Yang. Fabrication and characterization of silicon nanowires for devices applications compatible with low temperature (≤300 ˚C) flexible substrates. Electronics. Université Rennes 1, 2019. English. ⟨NNT : 2019REN1S123⟩. ⟨tel-02997877⟩

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