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Poster communications

Giant step bunching occurrence during graphene growth on 4H SiC(0001)

Haitham Hrich 1, 2, * Matthieu Paillet 1, 3 Tianlin Wang 1 Jean-Manuel Decams 4 Sylvie Contreras 1, 2 Perine Landois 1, 2, *
* Corresponding author
2 TQNS
L2C - Laboratoire Charles Coulomb
3 SCBD
L2C - Laboratoire Charles Coulomb
Abstract : T he main obstacle to the use of graphene on the industrial scale is the growth of a large and homogenous monolayer graphene Concerning this issue, it is worth noting that our group has recently developed a reproducible and controlled growth process of a monolayer graphene on SiC 0001 by sublimation at low Ar pressure i e 10 mbar Still, the control of the electronic properties of the obtained graphene by this process is very challenging E g the mobility on our graphene on 4 H SiC (0001) is around 2000 cm 2 v 1 s 1 at RT which is in the range of the measured mobilities on similar substrates Yet, it is still very low when compared with the mobilities reported for suspended graphene. It is well accepted that the electronic properties of graphene on SiC are highly sensitive to the substrate underneath It was reported that the mobility of graphene on SiC 0001 increases with increasing SiC steps width, and its resistance increases with increasing SiC steps height. This means that the electronic properties of graphene on SiC 0001 can be tuned by controlling the height and width of the terraces that results from the surface reconstruction of SiC before the growth i e Step bunching phenomenon
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Poster communications
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https://hal.archives-ouvertes.fr/hal-03039790
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Submitted on : Friday, December 4, 2020 - 8:52:48 AM
Last modification on : Wednesday, December 9, 2020 - 3:29:01 AM

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Haitham Hrich, Matthieu Paillet, Tianlin Wang, Jean-Manuel Decams, Sylvie Contreras, et al.. Giant step bunching occurrence during graphene growth on 4H SiC(0001). Graphene 2020 on line, Oct 2020, On line, France. ⟨hal-03039790⟩

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