Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3 - INRAE - Institut national de recherche pour l’agriculture, l’alimentation et l’environnement
Article Dans Une Revue Applied Physics Letters Année : 2024

Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3

L. Chen
A. Alekhin
C. Brochard-Richard
J. Chaste
A. Ouerghi

Résumé

Two-dimensional van der Waals ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Integration of ferroelectrics into 2D-layered material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Here, we investigate the electric and thermoelectric properties of thin layers of the 2H and 3R polymorphs of α-In2Se3 embedded in solid-state three-terminal devices. Charge transport measurements reveal a hysteretic behavior that can be ascribed to the effect of ferroelectric polarization at the metal electrode/2D semiconductor interfaces. The thermoelectric investigation of the same devices unveils a well-defined negative signal of the order of 100–200 μV/K in absolute value for the 2H polymorph, showing a slight modulation as a function of the gate voltage. An analogous but noisy thermoelectric voltage is measured for devices based on the 3R polymorph, where indeed a constant finite transversal offset in the 100 μV-few mV range is detected, which does not depend on the applied temperature gradient. We argue that these experimental observations are related to a strong residual in-plane ferroelectric polarization in the 3R α-In2Se3 polymorph thin layer. Our results show that the thermoelectric response is a fine probe of the ferroelectric character of 2D layered α-In2Se3.
Fichier non déposé

Dates et versions

hal-04665755 , version 1 (31-07-2024)

Identifiants

Citer

M. Rahimi, K. Sobnath, L. Chen, F. Mallet, P. Lafarge, et al.. Probing the electric and thermoelectric response of ferroelectric 2H and 3R α-In2Se3. Applied Physics Letters, 2024, 124 (25), ⟨10.1063/5.0202871⟩. ⟨hal-04665755⟩
31 Consultations
0 Téléchargements

Altmetric

Partager

More